Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch
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Results from the acceptance test in February 2011
Acceptance test for Au etch:
. | Acceptance Criteria |
Acceptance Results |
---|---|---|
Substrate information |
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. |
Material to be etched |
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. |
Mask information |
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. |
Features to be etched |
|
. |
Etch depth |
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Etch rate |
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Etch rate uniformity |
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Reproducibility |
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Selectivity (Au etch rate/ZEP etch rate) |
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|
Etch profile |
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Process parameters for the acceptance test
Parameter | Au etch acceptance |
---|---|
Neutalizer current [mA] | 550 |
RF Power [W] | 1300 |
Beam current [mA] | 500 |
Beam voltage [V] | 600 |
Beam accelerator voltage | 400 |
Ar flow to neutralizer [sccm] | 5.0 |
Ar flow to beam [sccm] | 10.0 |
Rotation speed [rpm] | 20 |
Stage angle [degrees] | 30 |