Specific Process Knowledge/Thin film deposition/Deposition of Germanium
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All text by DTU Nanolab staff
Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Resistive Thermal evaporation
Ge deposition equipment comparison
Thermal evaporation (Wordentec) | Thermal evaporation (Thermal Evaporator) | E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Sputtering (Lesker) | Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
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General description | Thermal deposition of Ge | Thermal deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
Pre-clean | none | none | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean |
Layer thickness | 10 Å to about 2000 Å (in total distributed on all loaded wafers) | 10 Å to about 2000 Å | few nm to about 1 µm* | 10 Å to at least 1000 Å | 10 Å to ? |
Deposition rate | 0.4 Å/s - ~ 2 Å/s | 1 Å/s | 1 Å/s - 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
Batch size |
Many small pieces |
Many small pieces |
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smaller pieces |
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Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet. |
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* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.