Specific Process Knowledge/Thin film deposition/Deposition of Germanium

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All text by DTU Nanolab staff

Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

	Thermal evaporation (Wordentec)	E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets))	Sputtering (Lesker)	Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	Thermal deposition of Ge	E-beam deposition of Ge	Sputter deposition of Ge	Sputter deposition of Ge
Pre-clean	none	Ar ion etch (only in E-beam evaporator Temescal)	RF Ar clean	RF Ar clean
Layer thickness	10 Å to about 2000 Å (in total distributed on all loaded wafers)	few nm to about 1 µm*	10 Å to at least 1000 Å	10 Å to ?
Deposition rate	0.4 Å/s - ~ 2 Å/s	1 Å/s - 5 Å/s	Depends on deposition parameters	Depends on deposition parameters
Batch size	24x 2" wafers or 6x 4" wafers or 6x 6" wafers or Many small pieces	Up to 4 x 6" wafer or 3x 8" wafers (ask for special holder) Many smaller pieces	1x6" wafer or 1x4" wafer or smaller pieces	10x6" or 4" wafers many smaller pieces
Allowed materials	Almost any that does not degas. See the cross-contamination sheet.	Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet.	Almost any that does not degas at your intended substrate temperature.	Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3

* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.