Specific Process Knowledge/Etch/ICP Metal Etcher

Etching of nanostructures in silicon using the ICP Metal Etcher

30 nm

	Sinano3.0	Sinano3.1	Sinano3.2	Sinano3.3	Sinano3.4	Sinano4.0	Sinano3.5	Sinano3.6
Cl2 (sccm)	0	0	0	0	0	20	15	15
BCl3 (sccm)	5	3	5	5	5	0	5	5
HBr (sccm)	15	17	15	15	15	0	0	0
Coil power (W)	900 (Load)	900 (Forward)	900 (Forward)	900 (Forward)	900 (Forward)	900 (Load)	900 (Load)	900 (Forward)
Platen power (W)	50	50	60	75	90	60	60	60
Pressure (mtorr)	2	2	2	2	2	2	5	10
Process time (s)	150	180	120	180	120	90	120	180
30 nm	198	231	147	214	163	227	185	170

• 1 - the first nanoetch

• Sinano3.0

• Sinano3.1

• Sinano3.2

• Sinano3.3

• Sinano3.4

• Sinano3.5

• Sinano3.6

• Sinano4.0