More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests
Recipe
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Recipe parameters
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Process time
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Date
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SEM picture
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SEM pic w/ no resist
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Redeposition - top view
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Profile angles
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Etch rate in SiO2
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Etch rate in resist (AZ5214E inverse)
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Selectivity (SiO2:resist)
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Etch rate in Si
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CF4ICP 22.5/22.5
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CF4= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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11:00 min
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11/09/2023
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68 nm/min +/- 8.5%
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60,2 nm/min +/- 9%
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1.13
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CF4ICP 35/10
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CF4= 35 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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08:00 min
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March 2023
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69 nm/min +/- 11.1%
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77,1 nm/min +/- 9.4%
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0.9
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CF4ICP 45/0
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CF4= 45 sccm H2= 0 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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08:00 min
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March 2023
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71.4 nm/min +/- 10.3%
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96,5 nm/min +/- 6.0%
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0.74
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CF4ICP 45/10
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CF4= 45 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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08:00 min
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March 2023
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67.8 nm/min +/- 14.9%
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88,86 nm/min +/- 4.8%
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0.76
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CF4lowCP 22.5/22.5
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CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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20:00 min
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Sept 2023
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23.8 nm/min +/- 11%
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20,6 nm/min +/- 19.4%
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1.16
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CF4lowCP 35/10
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CF4= 35 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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10:00 min
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Feb 2023
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22.65 nm/min +/- 10.2%
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35.9 nm/min +/- 10.1%
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0.63
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CF4lowCP 45/0
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CF4= 45 sccm H2= 0 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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10:00 min
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Feb 2023
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24.9 nm/min +/- 10.1%
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52,3 nm/min +/- 7.1%
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0.47
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CF4lowCP 45/10
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CF4= 45 sccm H2= 10 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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10:00 min
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Feb 2023
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29,4 nm/min +/- 13.7%
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100,6 nm/min +/- 16.5%
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0.29
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Recipes and results - CHF3 tests
Recipe
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Recipe parameters
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Process time
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Date
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SEM picture
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SEM pic w/ no resist
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Redeposition - top view
|
Profile angles
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Etch rate in SiO2
|
Etch rate in resist (AZ5214E inverse)
|
Selectivity (SiO2:resist)
|
Etch rate in Si
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CHF3_t1
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CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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12:00 min
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04/09/2023
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69.7 nm/min +/- 10.5%
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57.3 nm/min +/- 12.9%
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1.22
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CHF3_t2
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CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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25:00 min
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04/09/2023
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26.7 nm/min +/- 11.9%
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24.2 nm/min +/- 21.1%
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1.1
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CHF3 t2
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CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C
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10:00 min
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22/09/2023
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9,7 nm/min +/- 34.4%
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1,8 nm/min +/- 46.5%
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5.4
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CHF3_t1
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CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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12/09/2023
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59,6 nm/min +/- 12.9%
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47,5 nm/min +/- 21.5%
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1.25
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CHF3_t1
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CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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11/09/2023
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60,6 nm/min +/- 10.1%
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130,8 nm/min +/- 8.8%
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0.46
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CHF3 t1
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CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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20/09/2023
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47,3 nm/min +/- 12%
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26,4 nm/min +/- 17,4%
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1.8
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CHF3 t1
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CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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22/09/2023
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36,5 nm/min +/- 10.6%
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17,5 nm/min +/- 13.9%
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2.09
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CHF3 t1
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CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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22/09/2023
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42 nm/min +/- 15.4%
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23,8 nm/min +/- 22.2%
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1.76
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CHF3 t1
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CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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10:00 min
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22/09/2023
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75,8 nm/min +/- 13.1%
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74,9 nm/min +/- 10.8%
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1.01
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CHF3 t1
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CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C
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10:00 min
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22/09/2023
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-
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-
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no etch done, polymer deposited
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CHF3 t1
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CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C
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10:00 min
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22/09/2023
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48 nm/min +/- 11.2%
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23,3 nm/min +/- 13.7%
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2.06
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Recipes and results - C4F8 / H2 tests
Recipe
|
Recipe parameters
|
Process time
|
Date
|
SEM picture
|
SEM pic w/ no resist
|
Redeposition - top view
|
Profile angles
|
Etch rate in SiO2
|
Etch rate in resist (AZ5214E inverse)
|
Selectivity (SiO2:resist)
|
Etch rate in Si
|
SiO2_ICP
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C4F8= 10 sccm H2= 28 sccm Coil= 1000W Platen= 100W Press= 2.5mTorr Temp= 20°C
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04:00 min
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04/09/2023
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211,9 nm/min +/- 14.6%
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153,4 nm/min +/- 16.7%
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1.4
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SiO2_ICP
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C4F8= 10 sccm H2= 28 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C
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04:00 min
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22/09/2023
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134,7 nm/min +/- 20.8%
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145,7 nm/min +/- 25.1%
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0.92
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