Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE
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Revision as of 10:20, 25 November 2010 by BGE (talk | contribs) (→Etching of micro structures in Silicon Oxide with photoresist as masking material)
The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.
Etching of micro structures in Silicon Oxide with photoresist as masking material
The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:
Parameter | Resist mask |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
CF flow [sccm] | 5 |
H flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Negative Resist mask DANCHIP result |
---|---|
Etch rate [nm/min] | ~230nm/min |
Selectivity [:1] | ~3.6 |
Profile [o] | ~90 |
Images | See here |
Comments | A negative resist process was done to make the mask. I have not had so good results with a positive resist process. |