Specific Process Knowledge/Thin film deposition/Deposition of Germanium

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Deposition of Germanium

Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.

Thermal deposition

Thermal deposition of Ge in Wordentec

Ge deposition equipment comparison

	Thermal evaporation (Wordentec)	E-beam evaporation (Physimeca)	E-beam evaporation (Temescal)	Sputtering (Lesker)	Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	Thermal deposition of Ge	E-beam deposition of Ge	E-beam deposition of Ge	Sputter deposition of Ge	Sputter deposition of Ge
Pre-clean	RF Ar clean	-	Ar ion beam clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to about 2000Å (in total distributed on all loaded wafers)	10Å to about 3000Å	10Å to about 1000 nm	10Å to at least 1000 Å	10Å to ?
Deposition rate	From 0.4 Å/s up to about ~2Å/s	5 Å/s	From 1 Å/s up to 5 Å/s	Depends on deposition parameters	Depends on deposition parameters
Batch size	24x 2" wafers or 6x 4" wafers or 6x 6" wafers or Many small pieces	1x 2" wafer or 1x 4" wafers or Several smaller pieces	Up to 4 x 6" wafer or 3x 8" wafers (ask for special holder) Many smaller pieces	1x6" wafer or 1x4" wafer or smaller pieces	10x6" or 4" wafers many smaller pieces
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	III-V materials Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers Pyrex wafers See also the cross-contamination sheet	Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheet	Almost any that does not degas at your intended substrate temperature. See also the cross-contamination sheets
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Almost any as above	Almost any as above
Comment	Recommended for unexposed e-beam resist