Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD new page

The ALD window for deposition of hafnium oxide (HfO₂) ranges from 150 oC to 350 oC. XPS measurements shows that at temperatures below 150 oC the Al2O3 layer will be contaminated by unreacted TMA molecules, and at temperatures above 350 oC the TMA decomposes. All results shown on this page have been obtained using the "AL2O3" recipe on new Si(100) wafers with native oxide.

HfO₂ standard recipe

HfO₂ deposition using TEMAHf and H₂O precursors

The following tables show the recipe and boost settings for the TEMAHf precursor:

	TEMAHf	H2O
Nitrogen flow	150 sccm	120 sccm
Pulse time	1.6 s	0.1 s
Purge time	8.0 s	4.0 s

Boost flow	500 sccm
Pre-empty	0.5 s
Master fill	1.2 s
Post-empty	0 s