Specific Process Knowledge/Thin film deposition/Deposition of Ruthenium

From LabAdviser

Deposition of Ru

Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipments:


E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Ru

(line-of-sight deposition)

Sputter deposition of Ru

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm**
Deposition rate 0.5Å/s to 10Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment Please contact the thin film group before depositing Ru, even if Ru is in the machine.

The current target material belongs to a specific customer.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

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