Specific Process Knowledge/Thin film deposition/Deposition of Copper

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Deposition of Cu

Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)	Electroplating (Electroplating-Cu)
General description	E-beam deposition of Cu	Sputter deposition of Cu	Electroplating of Cu
Pre-clean	Ar ion bombardment	RF Ar clean	None
Layer thickness	10Å to 1µm*	10Å to 1µm**	thickness window undefined yet
Deposition rate	1Å/s to 10Å/s	~1Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller pieces	smaller pieces Up to 1x6" wafers	1x4" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Base Materials: Silicon Seed metals: Ti(10nm) + Au (80nm) (Recommended) Cr(10nm) + Au (80nm) (Recommended)
Comment	As of August 2018, Cu has not yet been deposited in this machine. Contact the Thin Film group to develop a process.		Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel