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Combined display of all available logs of LabAdviser. You can narrow down the view by selecting a log type, the username (case-sensitive), or the affected page (also case-sensitive).

• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 12:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 10:08, 4 April 2011 Ast talk contribs changed group membership for Giori from (none) to nanotech
• 08:59, 31 March 2011 Ast talk contribs changed group membership for Oiw from (none) to nanotech
• 14:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 150b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 150a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 120b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 120a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 090b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 090a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 060b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 060a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 030b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 14:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 030a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 08:19, 28 March 2011 Ast talk contribs changed group membership for Dgar from (none) to fotonik
• 15:18, 24 March 2011 Jml talk contribs uploaded File:WF 2C5 feb2011 150.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1817, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, -10 degs.)
• 15:18, 24 March 2011 Jml talk contribs uploaded File:WF 2C5 feb2011 120.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1817, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, -10 degs.)
• 15:18, 24 March 2011 Jml talk contribs uploaded File:WF 2C5 feb2011 090.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1817, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, -10 degs.)
• 15:18, 24 March 2011 Jml talk contribs uploaded File:WF 2C5 feb2011 060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1817, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, -10 degs.)
• 15:18, 24 March 2011 Jml talk contribs uploaded File:WF 2C5 feb2011 030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1817, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, -10 degs.)
• 15:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 150.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 15:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 120.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 15:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 090.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 15:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 15:16, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 15:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-150.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 15:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-120.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 15:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-090.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 15:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 15:14, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 11:43, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 11:43, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-120.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 11:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-090.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 11:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-060.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 11:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-030.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 11:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 150.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 11:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 120.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 11:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 090.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 11:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 060.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 11:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 030.jpg (The profiles of the 340 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:35, 17 March 2011 Ast talk contribs changed group membership for Bsb from (none) to nanotech
• 08:53, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-150.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)