Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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|Process temperature | |Process temperature | ||
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| | |560 <sup>o</sup>C and 620 <sup>o</sup>C | ||
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|Step coverage | |Step coverage | ||
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|Doping facility | |||
|None | |||
|Can be doped during deposition with Boron and/or Phosphorous | |||
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Revision as of 08:32, 5 December 2007
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Furnace PolySi | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | |
| Layer thickness | 10Å to 1µm | |
| Deposition rate | 2Å/s to 15Å/s | |
| Process temperature | 560 oC and 620 oC | |
| Step coverage | ||
| Film quality | ||
| Substrate material allowed | ||
| Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |