Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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|Process temperature | |Process temperature | ||
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| | |560 <sup>o</sup>C and 620 <sup>o</sup>C | ||
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|Step coverage | |Step coverage | ||
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|Doping facility | |||
|None | |||
|Can be doped during deposition with Boron and/or Phosphorous | |||
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