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| *As many small samples as can be fitted on a 100mm wafer | | *As many small samples as can be fitted on a 100mm wafer |
| *1 50 mm wafer fitted on a 100mm wafer | | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer |
| *1 100 mm wafer | | *<nowiki>#</nowiki>1 100 mm wafer |
| *1 150 mm wafers (only when the system is set up to 150mm) | | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) |
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| *As many small samples as can be fitted on a 100mm wafer | | *As many small samples as can be fitted on a 100mm wafer |
| *1 50 mm wafer fitted on a 100mm wafer | | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer |
| *1 100 mm wafer | | *<nowiki>#</nowiki>1 100 mm wafer |
| *1 150 mm wafers (only when the system is set up to 150mm) | | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) |
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| *As many small samples as can be fitted on a 150mm wafer | | *As many small samples as can be fitted on a 150mm wafer |
| *5 50 mm wafer fitted on a 150mm wafer | | *<nowiki>#</nowiki>5 50 mm wafer fitted on a 150mm wafer |
| *1 100 mm wafer on a 150mm wafer | | *<nowiki>#</nowiki>1 100 mm wafer on a 150mm wafer |
| *1 150 mm wafers (The system is normally set up to 150mm) | | *<nowiki>#</nowiki>1 150 mm wafers (The system is normally set up to 150mm) |
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| *As many samples as can be securely fitted on a up to 200mm wafer | | *As many samples as can be securely fitted on a up to 200mm wafer |
| *1 50 mm wafer with special carrier | | *<nowiki>#</nowiki>1 50 mm wafer with special carrier |
| *1 100 mm wafer with special carrier | | *<nowiki>#</nowiki>1 100 mm wafer with special carrier |
| *1 150 mm wafers with special carrier | | *<nowiki>#</nowiki>1 150 mm wafers with special carrier |
| *1 200 mm wafer | | *<nowiki>#</nowiki>1 200 mm wafer |
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| |-style="background:WhiteSmoke; color:black" | | |-style="background:WhiteSmoke; color:black" |
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of KOH etch, wet PolySilicon etch, RIE etch, ASE etch and DRIE-Pegasus for etching of Silicon
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KOH
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PolySilicon etch
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RIE
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ASE
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DRIE-Pegasus
|
| General description
|
- Anisotropic etch in the (100)-plan
- High selectivity to the other plans
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- Isotropic etch in Silicon and Polysilicon
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- Can etch isotropic and anisotropic depending on the process parameters
- Anisotropic etch: vertical sidewalls independent of the crystal plans
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- As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
- Good selectivity to photoresist
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- State-of-the-art dry silicon etcher with atmospheric cassette loader
- Extremely high etch rate and advanced processing options
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| Possible masking materials
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- Silicon Nitride
- Silicon Oxide
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|
- Photoresist
- E-beam resist
- Silicon Oxide
- Silicon Nitride
- Aluminium
- Chromium (ONLY RIE2!)
- Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
- Photoresist
- Silicon Oxide
- Silicon Nitride
- Aluminium
|
- Photoresist and zep resist
- Silicon Oxide
- Silicon Nitride
- Aluminium oxide
|
| Etch rate
|
- Si(100) @80oC: 1.29+0.05 µm/min
- Si(100) @70oC: ~0.7 µm/min
- Si(100) @60oC: ~0.4 µm/min
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- ~100-200 nm/min, highly dependent on doping level
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- <40nm/min to >600nm/min depending on recipe parameters and mask design
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- <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
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- Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
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| Size of substrate
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- 4" in our standard bath
- 4", 2" in "Fumehood KOH"
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- 4" (or smaller with carrier)
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- 6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
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- 6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
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| Batch size
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- 25 wafers at a time
- 1-5 wafers in "Fumehood KOH"
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|
|
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- One wafer at a time but you can load a whole batch of 25 wafers and set up an individual for each one
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| Allowed materials
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Other materials (only in "Fumehood KOH")
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- E-beam resist
- Aluminium
- Chromium (ONLY RIE2!)
- Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- E-beam resist
- Aluminium
|
- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- zep resist
- Aluminium oxide
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Comparing silicon etch methodes at Danchip 
There are a broad varity of silicon etch methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
Wet etches:
Dry etches:
Compare the methodes for Si etching
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|
KOH Etch
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Wet PolySilicon etch
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RIE (Reactive Ion Etch)
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DRIE-Pegasus (Silicon Etch)
|
ASE (Advanced Silicon Etch)
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ICP Metal Etch
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IBE/IBSD Ionfab 300
|
| Generel description
|
- Anisotropic etch in the (100)-plan
- High selectivity to the other plans
- Anisotropic etch: vertical sidewalls independent of the crystal plans
|
- Isotropic etch in Silicon and Polysilicon
|
- Can etch isotropic and anisotropic depending on the process parameters
|
- State-of-the-art dry silicon etcher with atmospheric cassette loader
- Extremely high etch rate and advanced processing options
|
- As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
- Good selectivity to photoresist
- The ASE is dedicated to polymer etch, which can affect the Si etch stability.
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- This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system.
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- Primarily for pure physical etch by sputtering with Ar-ions
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| Possible masking materials
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- Silicon Nitride
- Silicon Oxide
|
|
- Photoresist
- E-beam resist
- Silicon Oxide
- Silicon Nitride
- Aluminium
- Chromium (ONLY RIE2!)
- Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
- Photoresist and zep resist
- Silicon Oxide
- Silicon Nitride
- Aluminium oxide
|
- Photoresist
- Silicon Oxide
- Silicon Nitride
- Aluminium
|
- Photo-, DUV- and e-beamresist
- Silicon Oxide
- Silicon Nitride
- Aluminium
- Cr
- Ti
|
- Any material that is accepted in the machine
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| Etch rate range
|
- Si(100) @80oC: 1.29+0.05 µm/min
- Si(100) @70oC: ~0.7 µm/min
- Si(100) @60oC: ~0.4 µm/min
|
- ~100-200 nm/min, highly dependent on doping level
|
- <40nm/min to >600nm/min depending on recipe parameters and mask design
|
- Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
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- <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
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- Process dependant. The nano etch is in the range 59-311 nm/min
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- Process dependant. Has been tested in the range 17-31 nm/min
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| Substrate size
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- 25 wafers of 100mm in our 100mm bath
- 1-5 wafers of 100mm or 50mm in "Fumehood KOH"
- 25 wafers of 100mm or 150mm in our 6" bath
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- #25 100 mm wafers in our 100mm bath
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- As many small samples as can be fitted on the 100mm carrier.
- 1 100mm wafer (or smaller with carrier)
- 1 150mm wafer (only when the system is set up for 150mm)
|
- As many small samples as can be fitted on a 100mm wafer
- #1 50 mm wafer fitted on a 100mm wafer
- #1 100 mm wafer
- #1 150 mm wafers (only when the system is set up to 150mm)
|
- As many small samples as can be fitted on a 100mm wafer
- #1 50 mm wafer fitted on a 100mm wafer
- #1 100 mm wafer
- #1 150 mm wafers (only when the system is set up to 150mm)
|
- As many small samples as can be fitted on a 150mm wafer
- #5 50 mm wafer fitted on a 150mm wafer
- #1 100 mm wafer on a 150mm wafer
- #1 150 mm wafers (The system is normally set up to 150mm)
|
- As many samples as can be securely fitted on a up to 200mm wafer
- #1 50 mm wafer with special carrier
- #1 100 mm wafer with special carrier
- #1 150 mm wafers with special carrier
- #1 200 mm wafer
|
| Allowed materials
|
- Allowed material 1
- Allowed material 2
|
- Allowed material 1
- Allowed material 2
- Allowed material 3
|
|
- Allowed material 1
- Allowed material 2
- Allowed material 3
|
- Allowed material 1
- Allowed material 2
- Allowed material 3
|
