Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

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Substrate material allowed  Silicon wafers
Quartz wafers
Pyrex wafers
Material allowed on the substrate  Silicon oxide
Silicon (oxy)nitride
Photoresist
PMMA
Mylar
SU-8
Any metals


==Aluminium deposition on ZEP520A for lift-off==
==Aluminium deposition on ZEP520A for lift-off==

Revision as of 09:45, 1 March 2013


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Deposition of Aluminium

Aluminium can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Sputter deposition (PVD co-sputter/evaporation) Sputter deposition (Wordentec) Thermal evaporation (Wordentec)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 12x4" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm 10Å to 1 µm 10Å to 1000 Å 10Å to about 2000 Å 10Å to ~0.5µm (very time consuming ) 10Å to 0.5 µm (this uses all Al in the boat)
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s Dependent on process parameters (about 1 Å/s). Depending on process parameters, up to ~2.5 Å/s ~2Å/s to 15Å/s
Comment           Recommended for unexposed e-beam resist
Allowed substrates  
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers


Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8



Substrate material allowed Silicon wafers Quartz wafers Pyrex wafers

Material allowed on the substrate Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Any metals

Aluminium deposition on ZEP520A for lift-off

This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).

The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.

See details of the study here.


Aluminium deposition on AZ5214 for lift-off

Negative photolithographi process is recomended.

Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.

The more pattern the easyer lift.


It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath. This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.


Comparison of roughness and other surface characteristics for different methods of Aluminium deposition

Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study here.