Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
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|Recommended for unexposed e-beam resist | |Recommended for unexposed e-beam resist | ||
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* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
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* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
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* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
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!Allowed materials | |||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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Substrate material allowed Silicon wafers | |||
Quartz wafers | |||
Pyrex wafers | |||
Material allowed on the substrate Silicon oxide | |||
Silicon (oxy)nitride | |||
Photoresist | |||
PMMA | |||
Mylar | |||
SU-8 | |||
Any metals | |||
==Aluminium deposition on ZEP520A for lift-off== | ==Aluminium deposition on ZEP520A for lift-off== |
Revision as of 09:45, 1 March 2013
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Deposition of Aluminium
Aluminium can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | Sputter deposition (PVD co-sputter/evaporation) | Sputter deposition (Wordentec) | Thermal evaporation (Wordentec) | |
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Batch size |
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Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm | 10Å to 1 µm | 10Å to 1000 Å | 10Å to about 2000 Å | 10Å to ~0.5µm (very time consuming ) | 10Å to 0.5 µm (this uses all Al in the boat) |
Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | Dependent on process parameters (about 1 Å/s). | Depending on process parameters, up to ~2.5 Å/s | ~2Å/s to 15Å/s |
Comment | Recommended for unexposed e-beam resist | |||||
Allowed substrates |
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Allowed materials |
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Substrate material allowed Silicon wafers
Quartz wafers
Pyrex wafers
Material allowed on the substrate Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Any metals
Aluminium deposition on ZEP520A for lift-off
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).
The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
See details of the study here.
Aluminium deposition on AZ5214 for lift-off
Negative photolithographi process is recomended.
Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.
The more pattern the easyer lift.
It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath.
This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.
Comparison of roughness and other surface characteristics for different methods of Aluminium deposition
Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study here.