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| Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment. | | Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment. |
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| !
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| ![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
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| ![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
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| !Generel description
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| |Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
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| |Plasma Enhanced Chemical Vapour Deposition (PECVD process)
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| !Stoichiometry
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| *Si<sub>3</sub>N<sub>4</sub>
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| *SRN (only 4" nitride furnace)
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| Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
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| SRN: Silicon rich (low stress) nitride
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| *Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
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| *Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
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| Silicon nitride can be doped with boron, phosphorus or germanium
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| !Film thickness
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| *Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
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| *SRN: ~50 Å - ~2800 Å
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| Thicker nitride layers can be deposited over more runs
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| *~40 nm - 10 µm
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| !Process temperature
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| *780 <sup>o</sup>C - 845 <sup>o</sup>C
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| *300 <sup>o</sup>C
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| !Step coverage
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| *Good
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| *Less good
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| !Film quality
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| *Deposition on both sides og the substrate
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| *Dense film
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| *Few defects
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| *Deposition on one side of the substrate
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| *Less dense film
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| *Incorporation of hydrogen in the film
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| !KOH etch rate (80 <sup>o</sup>C)
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| *Expected <1 Å/min
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| *Dependent on recipe: ~1-10 Å/min
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| !BHF etch rate
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| *Very low
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| *Very high compared the LPCVD nitride
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| !Batch size
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| *1-25 100 mm wafers
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| *1-25 150 mm wafers (only 6" furnace)
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| Depending on what furnace you use
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| *Several smaller samples
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| *1-several 50 mm wafers
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| *1-3 100 mm wafers
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| *1 150 mm wafer
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| Depending on what PECVD you use
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| !'''Allowed materials'''
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| *Silicon
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| *Silicon oxide
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| *Silicon nitride
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| *Pure quartz (fused silica)
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| Processed wafers have to be RCA cleaned
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| *Silicon
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| *Silicon oxide (with boron, phosphorous and germanium)
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| *Silicon nitrides (with boron, phosphorous and germanium)
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| *Pure quartz (fused silica)
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| ! | | ! |
| ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) |
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| ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) |
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| | Batch size | | | Batch size |
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