Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

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Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


<br clear="all" />
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
|Plasma Enhanced Chemical Vapour Deposition (PECVD process)
|-
|-
|-style="background:LightGrey; color:black"
!Stoichiometry
|
*Si<sub>3</sub>N<sub>4</sub>
*SRN (only 4" nitride furnace)
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
SRN: Silicon rich (low stress) nitride
|
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron, phosphorus or germanium
|-
|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
|
*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
*SRN: ~50 Å - ~2800 Å
Thicker nitride layers can be deposited over more runs
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*~40 nm - 10 µm
|-
|-
|-style="background:LightGrey; color:black"
!Process temperature
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*780 <sup>o</sup>C - 845 <sup>o</sup>C
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*300 <sup>o</sup>C
|-
|-
|-style="background:WhiteSmoke; color:black"
!Step coverage
|
*Good
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*Less good
|-


|-
|-style="background:LightGrey; color:black"
!Film quality
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*Deposition on both sides og the substrate
*Dense film
*Few defects
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*Deposition on one side of the substrate
*Less dense film
*Incorporation of hydrogen in the film
|-


|-
|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
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*Expected <1 Å/min
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*Dependent on recipe: ~1-10 Å/min
|-


|-
|-style="background:LightGrey; color:black"
!BHF etch rate
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*Very low
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*Very high compared the LPCVD nitride
|-
|-
|-style="background:WhiteSmoke; color:black"
!Batch size
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*1-25 100 mm wafers
*1-25 150 mm wafers (only 6" furnace)
Depending on what furnace you use
|
*Several smaller samples
*1-several 50 mm wafers
*1-3 100 mm wafers
*1 150 mm wafer
Depending on what PECVD you use
|-
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
*Silicon
*Silicon oxide
*Silicon nitride
*Pure quartz (fused silica)
Processed wafers have to be RCA cleaned
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*Silicon
*Silicon oxide (with boron, phosphorous and germanium)
*Silicon nitrides (with boron, phosphorous and germanium)
*Pure quartz (fused silica)
|-
|}
<br clear="all" />
{| border="1" cellspacing="0" cellpadding="6"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
| Batch size
| Batch size
|
|

Revision as of 16:40, 28 February 2013


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Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Sputter deposition (PVD co-sputter/evaporation) Sputter deposition (Wordentec) Thermal evaporation (Wordentec)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 12x4" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm 10Å to 1 µm 10Å to 1000 Å 10Å to about 2000 Å 10Å to ~0.5µm (very time consuming ) 10Å to 0.5 µm (this uses all Al in the boat)
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s Dependent on process parameters (about 1 Å/s). Depending on process parameters, up to ~2.5 Å/s ~2Å/s to 15Å/s


Aluminium deposition on ZEP520A for lift-off

This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).

The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.

See details of the study here.


Aluminium deposition on AZ5214 for lift-off

Negative photolithographi process is recomended.

Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.

The more pattern the easyer lift.


It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath. This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.


Comparison of roughness and other surface characteristics for different methods of Aluminium deposition

Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study here.

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