Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions

@@ Line 164: / Line 164: @@
 *Several small samples
 *One 50 mm wafer
-*One 100 mm wafer (not possible to inspect entire wafer in JEOL SEM)
+*One 100 mm wafer
-*One 150 mm wafer (Only Zeiss, LEO and FEI SEM, not possible to inspect entire wafer)
+:(not possible to inspect entire wafer in JEOL SEM)
+*One 150 mm wafer
+:only Zeiss, LEO and FEI SEM, not possible to inspect entire wafer)
 |
 *One small sample
@@ Line 184: / Line 186: @@
 *Silicon,silion oxide, silicon nitride
 *Quartz, polymers and photoresist
-*Metals
+*Metals (except type 4)
+*III-V materials
+*Graphene and carbon nanotubes
 |
+*Silicon,silion oxide, silicon nitride
+*Quartz, glass
+*Polymers and photoresist
+*Metals (except type 4)
+*III-V materials
+*Graphene and carbon nanotubes
 |
+*Silicon,silion oxide, silicon nitride
+*Quartz, glass
+*polymers and photoresist (outbaked)
+*Metals (except type 4)
+*III-V materials
+*Graphene and carbon nanotubes
+:(Only FEI, use special sample holder)
 |
+*Silicon,silion oxide, silicon nitride
+*Quartz, glass
+*Polymers and photoresist
+*Metals (except type 4)
+*III-V materials
+*Graphene and carbon nanotubes
+|
+*Silicon,silion oxide, silicon nitride
+*Quartz, glass
+*Polymers and photoresist
+*Metals (except type 4)
+*III-V materials
+*Graphene and carbon nanotubes
 |-
 |}