Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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===Silicon oxide etch data=== | ===Silicon oxide etch data=== | ||
{| border="2" cellspacing="0" cellpadding="4" align="left" width=" | {| border="2" cellspacing="0" cellpadding="4" align="left" width="900" | ||
! | ! | ||
! BHF | ! BHF | ||
! 5% HF | ! 5% HF | ||
! 40 % HF | |||
! SIO | ! SIO | ||
|- | |- | ||
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Mainly for removing native oxide | Mainly for removing native oxide | ||
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Mainly for etching deep into borofloat or quartz wafers | |||
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Etching of silicon oxide - especially for etching small holes | Etching of silicon oxide - especially for etching small holes | ||
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|BHF | |BHF | ||
|5% HF | |5% HF | ||
|40% HF | |||
|BHF with wetting agent | |BHF with wetting agent | ||
|- | |- | ||
|'''Process temperature''' | |'''Process temperature''' | ||
|Room temperature | |||
|Room temperature | |Room temperature | ||
|Room temperature | |Room temperature | ||
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In RCA bench: | In RCA bench: | ||
*No masking material | *No masking material | ||
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In '''plastic''' beaker with magnetic stirrer in the fume hood in cleanroom 2: | |||
*Photoresist | |||
*Silicon nitride (Only on quartz wafers) | |||
*PolySi(Only on quartz wafers) | |||
*Blue film | |||
*Chromium and gold | |||
| | | | ||
*Photoresist | *Photoresist | ||
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*PECVD1 (standard):~87nm/min | *PECVD1 (standard):~87nm/min | ||
*TEOS:~153nm/min | *TEOS:~153nm/min | ||
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*Boronfloat and quartz: ~3-4 μm/min | |||
| | | | ||
A little higher etch rates than BHF | A little higher etch rates than BHF | ||
|- | |- | ||
|'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]''' | |'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]''' | ||
|~½ hour | |||
|~½ hour | |~½ hour | ||
|~½ hour | |~½ hour | ||
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RCA bench: | RCA bench: | ||
*1-25 wafers of 4" at a time | *1-25 wafers of 4" at a time | ||
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1-7 wafer of 4" at a time | |||
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1-25 wafer of 4" at a time | 1-25 wafer of 4" at a time | ||
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2"-6" wafers | 2"-6" wafers | ||
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4" wafers | |||
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4" wafers | 4" wafers | ||
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In RCA bench: | In RCA bench: | ||
*Only new wafers from the box or during RCA cleaning | *Only new wafers from the box or during RCA cleaning | ||
| | |||
In plastic beaker in the fume hood in cleanroom 2: | |||
*All materials | |||
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*Silicon | *Silicon | ||