Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 1: / Line 1: @@
-== The ICP Metal Etcher in short ==
+== The ICP Metal Etcher ==
-Despite its name the metal etcher doesn't etch metals in general. Currently, the list of metals that you can etch is quite short:
+The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]].
-* aluminium
-* titanium
+The gasses available for etching include flourine, chlorine and bromine.
-* titanium tungsten
-* chromium
+==Process information==
-Over time it is our intention to add other materials to the list such as molybdenum, tungsten, titaniumoxides or piezo-materials such as ZnO. However, currently you are not even allowed to expose other metals to the plasma. To etch other metals use the [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]].
+*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE|Etch of Silicon using ASE]]
+*[[Specific Process Knowledge/Etch/Etching of Polymer|Etch of polymers using ASE]]
+==An overview of the performance of the ASE and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="2"
+|-
+!style="background:silver; color:black;" align="left"|Purpose
+|style="background:LightGrey; color:black"|Dry etch of
+|style="background:WhiteSmoke; color:black"|
+* Metals such as aluminium, chromium and titanium and the related oxides and nitrides
+* Metals such as molybdenum, tungsten, titanium tungsten
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
+|style="background:LightGrey; color:black"|Etch rates
+|style="background:WhiteSmoke; color:black"|
+* Alumninium : ~350 nm/min (depending on features size and etch load)
+|-
+|style="background:LightGrey; color:black"|Anisotropy
+|style="background:WhiteSmoke; color:black"|
+*Good
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*~0.1-95 mTorr
+|-
+|style="background:LightGrey; color:black"|Gas flows
+|style="background:WhiteSmoke; color:black"|
+*SF<sub>6</sub>: 0-100 sccm
+*O<sub>2</sub>: 0-100 sccm
+*C<sub>4</sub>F<sub>8</sub>: 0-100 sccm
+*Ar: 0-100 sccm
+*CF<sub>4</sub>: 0-100 sccm
+*H<sub>2</sub>: 0-30 sccm
+*CH<sub>4</sub>: 0-50 sccm
+*BCl<sub>3</sub>: 0-100 sccm
+*Cl<sub>2</sub>: 0-100 sccm
+*HBr: 0-100 sccm
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*1 6" wafer per run
+*1 4" wafer per run
+*1 2" wafer per run
+*Or several smaller pieces on a carrier wafer
+|-
+| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon wafers
+**with layers of silicon oxide or silicon (oxy)nitride
+*Quartz wafers
+|-
+| style="background:LightGrey; color:black"|Possible masking material
+|style="background:WhiteSmoke; color:black"|
+*Photoresist/e-beam resist
+*PolySilicon, Silicon oxide or silicon (oxy)nitride
+*Aluminium, titanium or chromium
+|-
+|}
 == Recipes on the Metal Etcher ==