Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

From LabAdviser
Jml (talk | contribs)
Jml (talk | contribs)
Line 57: Line 57:
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"| Dry etch of
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|  
*Purpose 1
* Silicon
*Purpose 2
* Barc
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:LightGrey; color:black"|Etch rates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
* Standard processes A and B up to 15 µm/min
*Performance range 2
*  
|-
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:LightGrey; color:black"|Uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range  
*Performance range  

Revision as of 12:24, 29 November 2012

The DRIE Pegasus at Danchip

The SPTS Pegasus in the Danchip cleanroom

The Bosch process

The DRIE Pegasus is a state-of-art silicon dry etcher that offers outstanding performance in terms of etch rate, uniformity etc. It uses the so-called Bosch process to achieve excellent control of the etched features. Click here for more fundamental information of the system.

User manuals etc.

The user manual, quality control procedure and the results may all be found on the DRIE-Pegasus LabManager page.

Important information

In August 2011 we introduced a new set of rules regarding the loading of wafers. In you were trained prior to this, you can find more information here.

Acceptance test

The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found here.

Process information

Process notation

Describing a process recipe on the Pegasus may sometimes be difficult because of the great flexibility of the instrument. A compact and precise notation is therefore required for the recipes. Click here to find a short description of the official SPTS notation.

Standard recipes

Other etch processes


Equipment performance and process related parameters

Equipment Equipment 1
Purpose Dry etch of
  • Silicon
  • Barc
Performance Etch rates
  • Standard processes A and B up to 15 µm/min
Uniformity
  • Performance range
Process parameter range Parameter 1
  • Range
Parameter 2
  • Range
Substrates Batch size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2


Additional information

Material from SPTS