Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions

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!Si etch test1
!Si etch test1
!Si etch test2
!Si etch test2
!Si etch test3
|-
|-
|Neutalizer current [mA]
|Neutalizer current [mA]
|450
|450
|250
|250
|450
|-
|-
|RF Power [W]
|RF Power [W]
|1200
|1200
|1000
|1000
|1200
|-
|-
|Beam current [mA]
|Beam current [mA]
|400
|400
|200
|200
|400
|-
|-
|Beam voltage [V]
|Beam voltage [V]
|400
|400
|200
|200
|400
|-
|-
|Beam accelerator voltage
|Beam accelerator voltage
|400
|400
|200
|200
|400
|-
|-
|Ar flow to neutralizer [sccm]
|Ar flow to neutralizer [sccm]
|6.0
|6.0
|6.0
|6.0
|6.0
|-
|-
|Ar flow to beam [sccm]
|Ar flow to beam [sccm]
|6.0
|6.0
|6.0
|6.0
|6.0
|-
|-
|Rotation speed [rpm]
|Rotation speed [rpm]
|20
|20
|20
|20
|20
|-
|-
|Stage angle [degrees]
|Stage angle [degrees]
|10
|10
|10
|10
|10
|-
|-
|Platen temp.  [dg. Celcius]
|Platen temp.  [dg. Celcius]
|15
|15
|15
|15
|15
|-
|-
|He cooling pressure [mTorr]
|He cooling pressure [mTorr]
|37.5
|37.5
|37.5
|37.5
|37.5
|-
|-
|Etch material
|Etch material
|Si
|Si
|Si
|Si
|Si
|-
|-
|'''Results'''
|'''Results'''
|'''vvv'''
|'''vvv'''
|'''vvv'''
|'''vvv'''
|'''vvv'''
Line 63: Line 77:
|40
|40
|40
|40
|7:15
|-
|-
|Etch rate in Si [nm/min]
|Etch rate in Si [nm/min]
|19.7
|19.7
|3.58
|3.58
|19.3
|-
|-
|Total time in Acetone + ultrasound [min]
|Total time in Acetone + ultrasound [min]
|17
|17
|10
|10
|20
|-
|-
|Was the resist completely removed after acetone + ultrasound?
|Was the resist completely removed after acetone + ultrasound?
|no
|no
|yes
|yes
|yes (almost)
|-
|-
|}
|}

Revision as of 10:50, 1 August 2012

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter Si etch test1 Si etch test2 Si etch test3
Neutalizer current [mA] 450 250 450
RF Power [W] 1200 1000 1200
Beam current [mA] 400 200 400
Beam voltage [V] 400 200 400
Beam accelerator voltage 400 200 400
Ar flow to neutralizer [sccm] 6.0 6.0 6.0
Ar flow to beam [sccm] 6.0 6.0 6.0
Rotation speed [rpm] 20 20 20
Stage angle [degrees] 10 10 10
Platen temp. [dg. Celcius] 15 15 15
He cooling pressure [mTorr] 37.5 37.5 37.5
Etch material Si Si Si
Results vvv vvv vvv
Etch time [min] 40 40 7:15
Etch rate in Si [nm/min] 19.7 3.58 19.3
Total time in Acetone + ultrasound [min] 17 10 20
Was the resist completely removed after acetone + ultrasound? no yes yes (almost)
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