Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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*Amorphous polySi: 0-1000 nm | *Amorphous polySi: 0-1000 nm | ||
*Boron doped polySi: 0-1000 nm | *Boron doped polySi: 0-1000 nm | ||
4" furnace | 4" furnace: | ||
*Standard polySi: 0-2000 nm | *Standard polySi: 0-2000 nm | ||
*Amorphous polySi: 0-2000 nm | *Amorphous polySi: 0-2000 nm | ||
*Boron doped polySi: 0-2000 nm | *Boron doped polySi: 0-2000 nm | ||
*Phosphorus doped polySi: 0-1000 nm | *Phosphorus doped polySi: 0-1000 nm | ||
Thicker layers have to be deposited over more runs | |||
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|style="background:LightGrey; color:black"|Step coverage | |style="background:LightGrey; color:black"|Step coverage | ||
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*Good | *Good | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Film quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Good | *Deposition on both sides of the substrate | ||
*Good uniformity over the wafer | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
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*Amorphous polySi: 560-580 <sup>o</sup>C | *Amorphous polySi: 560-580 <sup>o</sup>C | ||
*Boron doped polySi: 600-620 <sup>o</sup>C | *Boron doped polySi: 600-620 <sup>o</sup>C | ||
4" furnace: | 4" furnace: | ||
*Standard polySi: 620 <sup>o</sup>C | *Standard polySi: 620 <sup>o</sup>C | ||
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*Boron doped polySi: 620 <sup>o</sup>C | *Boron doped polySi: 620 <sup>o</sup>C | ||
*Phosphorus doped polySi: 620 <sup>o</sup>C | *Phosphorus doped polySi: 620 <sup>o</sup>C | ||
The process temperature | The process temperature vary over the furnace tube | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*150-250 mTorr | 6" furnace: | ||
*150-220 mTorr | |||
4" furnace: | |||
*250 mTorr | |||
The process pressure depends on the actual process | The process pressure depends on the actual process | ||
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*SiH<math>_4</math>: 50-70 sccm | *SiH<math>_4</math>: 50-70 sccm | ||
*BCl<math>_1</math>: 1 sccm | *BCl<math>_1</math>: 1 sccm | ||
4" furnace: | 4" furnace: | ||
*SiH<math>_4</math>: 80 sccm | *SiH<math>_4</math>: 80 sccm | ||
*B<math>_2</math>H<math>_6</math>: 7 sccm | *B<math>_2</math>H<math>_6</math>: 7 sccm | ||
*PH<math>_1</math>: 7 sccm | *PH<math>_1</math>: 7 sccm | ||
The silane (SiH<math>_4</math>) flow depends on the actual process | |||
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
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6" furnace: | 6" furnace: | ||
*1-25 4" wafers or 6" wafers per run | *1-25 4" wafers or 6" wafers per run | ||
4" furnace: | |||
*1-30 4" wafers per run | *1-30 4" wafers per run | ||
Deposition on both sides of the substrate | Deposition on both sides of the substrate | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers ( | *Silicon wafers (only clean wafers): | ||
**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | |||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||
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