Specific Process Knowledge/Characterization/XPS: Difference between revisions
| Line 8: | Line 8: | ||
==XPS technique== | ==XPS technique== | ||
XPS is a surface sensitive and non destructive technique used for elemental composition analysis. | |||
In the XPS spectrometer system the probed samples are irradiated by photons with a specific energy, and the photoelectrons that leaves the sample are detected. The energy levels of the electrons are elemental specific, and by measuring the energy of the outgoing electrons, it is possible to detect which elements that are present in a sample. | |||
[[image:Si spectra Labadvisor.JPG|300x300px|right|thumb|XPS Si2p spectrum of Si sample]] | |||
[[Image:Stochiometry 20110510.JPG|300x300px|right|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | |||
==A rough overview of XPS-ThermoScientific characteristics== | ==A rough overview of XPS-ThermoScientific characteristics== | ||