Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | |||
! Furnace PolySi | ! Furnace PolySi | ||
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*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | |||
* 4x6" wafers or | |||
* 4x4" wafers or | |||
* 2x2" wafers | |||
| | | | ||
*1-25 wafers of 4" | *1-25 wafers of 4" | ||
| Line 16: | Line 21: | ||
|- | |- | ||
| Pre-clean | | Pre-clean | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|RCA clean for wafers that are not fresh form the box. | |RCA clean for wafers that are not fresh form the box. | ||
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| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
|10Å to about 3000Å | |||
|~50Å to 2µm, if thicker layers are needed please ask the furnace team. | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|Dependent on process parameters, but in the order of 1 Å/s | |||
| | | | ||
*undoped, boron doped:~100Å/min | *undoped, boron doped:~100Å/min | ||
| Line 31: | Line 39: | ||
|Process temperature | |Process temperature | ||
|? | |? | ||
| Option: heating wafer up to 400 deg C | |||
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | |560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly) | ||
|- | |- | ||
|Step coverage | |Step coverage | ||
|Poor | |Poor | ||
|. | |||
|Good | |Good | ||
|- | |- | ||
|Adhesion | |Adhesion | ||
|Bad for pyrex, for other materials we do not know | |Bad for pyrex, for other materials we do not know | ||
|. | |||
|Good for fused silica, silicon oxide, silicon nitride, silicon | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
|- | |- | ||
|Substrate material allowed | |Substrate material allowed | ||
|Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | |Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | ||
|Pyrex, fused silica, silicon, metals, oxide, nitride | |||
|Fused silica, Silicon, oxide, nitride | |Fused silica, Silicon, oxide, nitride | ||
|- | |- | ||
|Doping facility | |Doping facility | ||
|None | |||
|None | |None | ||
|Can be doped during deposition with Boron and/or Phosphorous | |Can be doped during deposition with Boron and/or Phosphorous | ||
Revision as of 14:57, 14 September 2011
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Sputter(PVD co-sputter/evaporation) | Furnace PolySi | |
|---|---|---|---|
| Batch size |
|
|
|
| Pre-clean | RF Ar clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. |
| Layer thickness | 10Å to 1µm | 10Å to about 3000Å | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. |
| Deposition rate | 2Å/s to 15Å/s | Dependent on process parameters, but in the order of 1 Å/s |
|
| Process temperature | ? | Option: heating wafer up to 400 deg C | 560 oC (amorph) and 620 oC (poly) |
| Step coverage | Poor | . | Good |
| Adhesion | Bad for pyrex, for other materials we do not know | . | Good for fused silica, silicon oxide, silicon nitride, silicon |
| Substrate material allowed | Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | Pyrex, fused silica, silicon, metals, oxide, nitride | Fused silica, Silicon, oxide, nitride |
| Doping facility | None | None | Can be doped during deposition with Boron and/or Phosphorous |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |