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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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!  
!  
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Furnace PolySi
! Furnace PolySi
|-  
|-  
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*Up to 1x4" wafers
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
* 4x6" wafers or
* 4x4" wafers or
* 2x2" wafers
|
|
*1-25 wafers of 4"
*1-25 wafers of 4"
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|-
|-
| Pre-clean
| Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RCA clean for wafers that are not fresh form the box.
|RCA clean for wafers that are not fresh form the box.
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| Layer thickness
| Layer thickness
|10Å to 1µm  
|10Å to 1µm  
|10Å to about 3000Å
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|-
|-
| Deposition rate
| Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
|Dependent on process parameters, but in the order of 1 Å/s
|
|
*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
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|Process temperature
|Process temperature
|?
|?
| Option: heating wafer up to 400 deg C
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|-
|-
|Step coverage
|Step coverage
|Poor
|Poor
|.
|Good
|Good
|-
|-
|Adhesion
|Adhesion
|Bad for pyrex, for other materials we do not know
|Bad for pyrex, for other materials we do not know
|.
|Good for fused silica, silicon oxide, silicon nitride, silicon
|Good for fused silica, silicon oxide, silicon nitride, silicon
|-
|-
|Substrate material allowed
|Substrate material allowed
|Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape
|Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|-
|-
|Doping facility
|Doping facility
|None
|None
|None
|Can be doped during deposition with Boron and/or Phosphorous
|Can be doped during deposition with Boron and/or Phosphorous