Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

@@ Line 4: / Line 4: @@
 !
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
-! E-beam evaporation ()
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+! E-beam evaporation
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
 ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
@@ Line 13: / Line 13: @@
 *Up to 1x4" wafers
 *smaller pieces
-|
-*8x4" wafers or
-*5x6" wafers
 |
 *24x2" wafers or
 *6x4" wafers or
 *6x6" wafers
+|
+* wafers
 |
 *24x2" wafers or
@@ Line 31: / Line 30: @@
 | Pre-clean
 |RF Ar clean
-|Ar ion bombartment
 |RF Ar clean
+|  .
 |RF Ar clean
 |RF Ar clean
@@ Line 38: / Line 37: @@
 | Layer thickness
 |10Å to 1µm
-|10Å to 1500 Å
 |10Å to 1 µm
+|  .
 |10Å to ~0.5µm (very time consuming )
 |10Å to 0.5 µm (this uses all Al in the boat)
@@ Line 45: / Line 44: @@
 | Deposition rate
 |2Å/s to 15Å/s
-|1Å/s to 5Å/s
 |10Å/s to 15Å/s
+|  .
 |Depending on process parameters (see [[/Sputter rates for Al|here]]), up to ~2.5 Å/s
 |~8Å/s to 15Å/s