Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
No edit summary |
No edit summary |
||
| Line 4: | Line 4: | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation | |||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
| Line 13: | Line 13: | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
| | |||
* wafers | |||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
| Line 31: | Line 30: | ||
| Pre-clean | | Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| . | |||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| Line 38: | Line 37: | ||
| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
|10Å to 1 µm | |10Å to 1 µm | ||
| . | |||
|10Å to ~0.5µm (very time consuming ) | |10Å to ~0.5µm (very time consuming ) | ||
|10Å to 0.5 µm (this uses all Al in the boat) | |10Å to 0.5 µm (this uses all Al in the boat) | ||
| Line 45: | Line 44: | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
| . | |||
|Depending on process parameters (see [[/Sputter rates for Al|here]]), up to ~2.5 Å/s | |Depending on process parameters (see [[/Sputter rates for Al|here]]), up to ~2.5 Å/s | ||
|~8Å/s to 15Å/s | |~8Å/s to 15Å/s | ||
Revision as of 11:43, 15 August 2011
Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation | Sputter deposition (Wordentec) | Thermal evaporation (Wordentec) | |
|---|---|---|---|---|---|
| Batch size |
|
|
|
|
|
| Pre-clean | RF Ar clean | RF Ar clean | . | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 1µm | 10Å to 1 µm | . | 10Å to ~0.5µm (very time consuming ) | 10Å to 0.5 µm (this uses all Al in the boat) |
| Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | . | Depending on process parameters (see here), up to ~2.5 Å/s | ~8Å/s to 15Å/s |
Aluminium deposition on ZEP520A for lift-off
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).
The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
See details of the study here.
Aluminium deposition on AZ5214 for lift-off
Negative photolithographi process is recomended.
Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.
The more pattern the easyer lift.
It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath.
This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.
Comparison of roughness and other surface characteristics for different methods of Aluminium deposition
Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study here.