Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions
| Line 27: | Line 27: | ||
| Platen | | Platen | ||
|- | |- | ||
! | ! poly1 | ||
| | |||
| Oxide hard mask | |||
| polyimide/PMMA | | polyimide/PMMA | ||
| 0 | | 0 | ||
| Line 35: | Line 36: | ||
| 0 | | 0 | ||
| 4 | | 4 | ||
| 0 | | 0 | ||
| 600 | | 600 | ||
| 150 | | 150 | ||
| This will etch PMGI, PI, & standard resists. We've never tried it for PMMA, but it should work | | This will etch PMGI, PI, & standard resists. We've never tried it for PMMA, but it should work | ||
|- | |- | ||
! poly2 | |||
| | |||
| | |||
| | |||
| 20 | |||
| 0 | |||
| 0 | |||
| 20 | |||
| 3 | |||
| 10 | |||
| 600 | |||
| 150 | |||
| This will give higher etch rates & better selectivities, but slightly more bowed profiles | |||
|- | |||
! poly3 | |||
| | |||
| | |||
| | |||
| 43 | |||
| 0 | |||
| 43 | |||
| 0 | |||
| 4 | |||
| 20 | |||
| 800 | |||
| 150 | |||
| A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers. The SF<sub>6</sub>/O<sub>2</sub> ratio will depend on the composition of the polymer. | |||
|- | |||
|} | |} | ||
BCB: 7 SF6, 43 O2, 4 mT, 800W, 150W, 20 degrees C. | |||
An alternative chemistry for standard resists,PI, PMMA is 20 O2, 20 He, 3 mT, 600W, 150 W, 10 degrees C. This will give higher etch rates & better selectivities, but slightly more bowed profiles | An alternative chemistry for standard resists,PI, PMMA is 20 O2, 20 He, 3 mT, 600W, 150 W, 10 degrees C. This will give higher etch rates & better selectivities, but slightly more bowed profiles | ||