Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
Jump to navigation
Jump to search
Line 247: | Line 247: | ||
{| border="1" cellspacing="1" cellpadding="3" | {| border="1" cellspacing="1" cellpadding="3" | ||
! '''Recipe''' | ! '''Recipe''' | ||
! '''Time (min)''' | ! '''Time (min)''' | ||
! '''Date''' | ! '''Date''' | ||
Line 258: | Line 257: | ||
|- | |- | ||
|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> '''CHF3_t1''' | |<!-- '''Recipe name''' --> '''CHF3_t1''' <br> | ||
CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--Process time--> 2:30 | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> 29/02/2024 | |<!--'''Date'''--> 29/02/2024 |
Revision as of 16:20, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests