Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
! '''Selectivity <br> (SiO2:resist)''' | ! '''Selectivity <br> (SiO2:resist)''' | ||
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|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> | |<!-- '''Recipe name''' --> | ||
|<!-- '''SiO2 before etch''' -- | |<!-- '''SiO2 before etch''' --> | ||
|<!--'''Process time'''--> | |<!--'''Process time'''--> | ||
|<!--'''Date'''--> | |<!--'''Date'''--> | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |<!--'''Selectivity (SiO2:resist)'''--> | ||
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|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> | |<!-- '''Recipe name''' --> | ||
|<!-- '''SiO2 before etch''' -- | |<!-- '''SiO2 before etch''' --> | ||
|<!--'''Process time'''--> | |<!--'''Process time'''--> | ||
|<!--'''Date'''--> | |<!--'''Date'''--> | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |<!--'''Selectivity (SiO2:resist)'''--> | ||
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|- | |- | ||
|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> | |<!-- '''Recipe name''' --> | ||
|<!-- '''SiO2 before etch''' -- | |<!-- '''SiO2 before etch''' --> | ||
|<!--'''Process time'''--> | |<!--'''Process time'''--> | ||
|<!--'''Date'''--> | |<!--'''Date'''--> | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
|<!--'''Selectivity (SiO2:resist)'''--> | |<!--'''Selectivity (SiO2:resist)'''--> | ||
|- | |- | ||
|- | |- |
Revision as of 13:32, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):