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Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide: Difference between revisions

Eves (talk | contribs)
Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Gadolinium_Cerium_Oxide click here]''' ''All text by Nanolab staff'' <br clear="all" /> == Deposition of Gadolinium Cerium Oxide == Thin films of Gadolinium Cerium Oxide (Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub>) can be deposited using RF sputtering. In this process, the ma..."
 
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!Stoichiometry
!Stoichiometry
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*d<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (can be tuned)
*Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (can be tuned)


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!Process Temperature
!Process Temperature
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* Up to 400 °C (most likely in the range of 200°C)
* Up to 600 °C (most likely in the range of 200°C)
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