Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide: Difference between revisions

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Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Gadolinium_Cerium_Oxide click here]''' ''All text by Nanolab staff'' <br clear="all" /> == Deposition of Gadolinium Cerium Oxide == Thin films of Gadolinium Cerium Oxide (Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub>) can be deposited using RF sputtering. In this process, the ma..."
 
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!Stoichiometry
!Stoichiometry
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*d<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (can be tuned)
*Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (can be tuned)


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!Process Temperature
!Process Temperature
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* Up to 400 °C (most likely in the range of 200°C)
* Up to 600 °C (most likely in the range of 200°C)
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Latest revision as of 17:46, 7 February 2024

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All text by Nanolab staff

Deposition of Gadolinium Cerium Oxide

Thin films of Gadolinium Cerium Oxide (Gd0.2Ce0.8O2) can be deposited using RF sputtering. In this process, the main parameters are temperature and additional oxygen, which can be adjusted to tailor the properties of the deposited films. The target is a solid ceramic 75 mm (0.125" thickness) GCO target bonded to a Cu plate.


GCO sputtering in Sputter-System Metal-Oxide (PC1)

Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)
Generel description
  • RF sputtering
  • R-RF sputtering
Stoichiometry
  • Gd0.2Ce0.8O2 (can be tuned)
Film Thickness
  • few nm - ? (hundreds of nm)
Deposition rate
  • 0.015-0.025 nm/s
Step coverage
  • Not investigated
Process Temperature
  • Up to 600 °C (most likely in the range of 200°C)
Substrate size
  • Several small samples
  • 100 mm wafer
  • 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic
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