Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions

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 {{CC-bghe2}} <br>
 *[[/Cr mask|More tests with Cr mask]]
+===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch===
+Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer
+<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask [[Main_Page/Process_Logs/bghe/Cr_etch]], with 500 nm resist" widths="200px" heights="200px" perrow="6">
+File:C041630_center_07.jpg
+File:C041630_center_08.jpg
+File:C041630_center_09.jpg
+File:C041630_center_10.jpg
+File:C041630_center_11.jpg
+File:C041630_center_22.jpg
+</gallery>
+<gallery widths="200px" heights="200px" perrow="6">
+File:C041630_center_02.jpg
+File:C041630_center_03.jpg
+File:C041630_center_04.jpg
+File:C041630_center_05.jpg
+File:C041630_center_06.jpg
+</gallery>
+<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask [[Main_Page/Process_Logs/bghe/Cr_etch]], with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4">
+File:S0411376_profile_20.jpg| 200nm/400nm
+File:S0411376_profile_13.jpg|250nm/500nm
+File:S0411376_profile_14.jpg| 400nm/800nm
+File:S0411376_profile_15.jpg|500nm/1000nm
+File:S0411376_profile_17.jpg|1000nm/2000nm
+File:S0411376_profile_18.jpg|2000nm/4000nm
+</gallery>
 ===Testing with electromagnetic coils /Cr mask===