Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch: Difference between revisions
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! '''Date''' | ! '''Date''' | ||
! '''SEM picture''' | ! '''SEM picture''' | ||
! '''Etch rate in SiO2''' | ! '''Etch rate in SiO2''' | ||
! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
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|<!--'''Process time'''--> 04:00 min | |<!--'''Process time'''--> 04:00 min | ||
|<!--'''Date'''--> 04/09/2023 | |<!--'''Date'''--> 04/09/2023 | ||
|<!--'''SEM picture'''--> [[File:SiO2 ICP 4m pat C 07.png|200px]] | |<!--'''SEM picture'''--> [[File:SiO2 ICP 4m pat C 07.png|200px]] [[File:SiO2_ICP 4min af PA 02.png|200px]] [[File:SiO2 ICP 4m pat C 04.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 211,9 nm/min <br> +/- 14.6% | |<!--'''Etch rate in SiO2'''--> 211,9 nm/min <br> +/- 14.6% | ||
|<!--'''Etch rate in resist'''--> 153,4 nm/min <br> +/- 16.7% | |<!--'''Etch rate in resist'''--> 153,4 nm/min <br> +/- 16.7% | ||
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|<!--'''Process time'''--> 04:00 min | |<!--'''Process time'''--> 04:00 min | ||
|<!--'''Date'''--> 22/09/2023 | |<!--'''Date'''--> 22/09/2023 | ||
|<!--'''SEM picture'''--> [[File:SiO2_ICP 800W-15W 4min C 04.png|200px]] | |<!--'''SEM picture'''--> [[File:SiO2_ICP 800W-15W 4min C 04.png|200px]] [[File:SiO2_ICP 800.15W 4min af PA 02.png|200px]] [[File:SiO2_ICP 800W-15W 4min E 04.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 134,7 nm/min <br> +/- 20.8% | |<!--'''Etch rate in SiO2'''--> 134,7 nm/min <br> +/- 20.8% | ||
|<!--'''Etch rate in resist'''--> 145,7 nm/min <br> +/- 25.1% | |<!--'''Etch rate in resist'''--> 145,7 nm/min <br> +/- 25.1% |
Revision as of 12:28, 14 December 2023
More test with CF4/H2, CHF3 and C4F8/H2 - SiO2 etch
Tests performed by Maria Farinha @DTU Nanolab
Recipes and results - CF4 / H2 tests