Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/EM with resist mask: Difference between revisions
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*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A | *Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A | ||
<gallery> | <gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5"> | ||
File:C09975_00.jpg | File:C09975_00.jpg | ||
File:C09975_02.jpg | File:C09975_02.jpg |