Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/ICP recipe for SiO2: Difference between revisions
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(Created page with " {| border="2" cellspacing="2" cellpadding="3" |-style="background:DarkGray; color:White" !Material to be etched !Recipe: 1SiO2_02 <span style="background:#FFD700">'''*This recipe is no longer stable.'''</span> !Recipe: 1SiO2_03 !Testing other settings to increase etch rate in nitride |- |Etch rate in SiO2 |22.1 nm/min |26.8 nm/min |? |- |Etch rate in PECVD nitride |. |20.8nm/min (''kabi@nanolab 20190301'') - ~0nm/min (''ecsj@nanolab 20210729'') |? |- |Etch rate in LPCVD...") |
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This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature. | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" |
Revision as of 14:18, 15 May 2023
This recipe was taken from the ICP Metal etch, with a slight difference in the platen temperature.