Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

@@ Line 13: / Line 13: @@
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
 ! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
 |-
 |-style="background:WhiteSmoke; color:black"
@@ Line 18: / Line 20: @@
 | E-beam deposition of Pd
 | E-beam deposition of Pd
+| Sputter deposition of Pd
 |-
 |-style="background:Lightgrey; color:black"
@@ Line 23: / Line 27: @@
 |Ar ion source
 |none
+|RF Ar clean
 |-
 |-style="background:WhiteSmoke; color:black"
@@ Line 28: / Line 34: @@
 |10 Å - 600 nm*
 |10 Å - 600 nm*
+|10 Å - 600 nm*
 |-
 |-style="background:Lightgrey; color:black"
@@ Line 33: / Line 41: @@
 |0.5 Å/s to 10Å/s
 |2 Å/s to 10Å/s
+|Up to 4.3 Å/s
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Batch size
 |
@@ Line 45: / Line 54: @@
 *Up to 6x4" wafers (deposition on one wafer at the time)
 *smaller wafers and pieces
+|
+*1x4" wafer or
+*1x6" wafer or
+*several small samples
 |-
 |-style="background:Lightgrey; color:black"
 !Allowed materials
+|
+*Silicon oxide
+*Silicon (oxy)nitride
+*Photoresist
+*PMMA
+*Mylar
+*Metals
+*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 |
 *Silicon oxide
@@ Line 67: / Line 89: @@
 |-style="background:WhiteSmoke; color:black"
 ! Comment
+|
 |
 |