Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | ! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | ||
! Sputter coater [[Specific Process Knowledge/Thin film deposition/Sputter coater#Sputter coater 03|(Sputter coater 03)]] | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam evaporation of W | | E-beam evaporation of W | ||
| Sputtering of W | |||
| Sputtering of W | | Sputtering of W | ||
| Sputtering of W | | Sputtering of W | ||
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|None | |None | ||
|Ar ion beam | |Ar ion beam | ||
|None | |||
|- | |- | ||
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|10Å to 600nm | |10Å to 600nm | ||
|10Å to 600nm | |10Å to 600nm | ||
|10Å to 600nm | |||
|- | |- | ||
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! Deposition rate | ! Deposition rate | ||
|0.5 Å/s to 1 Å/s | |0.5 Å/s to 1 Å/s | ||
|about 1 Å/s | |||
|about 1 Å/s | |about 1 Å/s | ||
|about 1 Å/s | |about 1 Å/s | ||
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*Up to 4x6" wafers | *Up to 4x6" wafers | ||
*Up to 3x8" wafers (ask for holder) | *Up to 3x8" wafers (ask for holder) | ||
*small pieces | |||
| | |||
*Up to 1x4" wafers | |||
*Up to 1x6" wafer | |||
*small pieces | *small pieces | ||
| | | | ||
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* Metals | * Metals | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
| | | | ||
* Silicon | * Silicon | ||
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| Substrate gets hot during deposition | | Substrate gets hot during deposition | ||
(for a 60 nm film it rose above 123 C) | (for a 60 nm film it rose above 123 C) | ||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
Revision as of 14:23, 2 January 2023
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Tungsten deposition
Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment.
Sputtering of W
| E-beam evaporation (Temescal) | Sputter-system (Lesker) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | Sputter coater (Sputter coater 03) | |
|---|---|---|---|---|
| General description | E-beam evaporation of W | Sputtering of W | Sputtering of W | Sputtering of W |
| Pre-clean | Ar ion beam | None | Ar ion beam | None |
| Layer thickness | 10Å to 50nm* | 10Å to 600nm | 10Å to 600nm | 10Å to 600nm |
| Deposition rate | 0.5 Å/s to 1 Å/s | about 1 Å/s | about 1 Å/s | about 1 Å/s |
| Batch size |
|
|
|
|
| Allowed materials |
|
|
|
|
| Comments | Substrate gets hot during deposition
(for a 60 nm film it rose above 123 C) |
Deposition rate is 0.083 nm/s for 150W and 3mTorr | Deposition rate is 0.083 nm/s for 150W and 3mTorr | Deposition rate is 0.083 nm/s for 150W and 3mTorr |
* For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.