Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam evaporation of W | | E-beam evaporation of W | ||
| Sputtering of W | |||
| Sputtering of W | | Sputtering of W | ||
|- | |- | ||
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|Ar ion beam | |Ar ion beam | ||
|None | |None | ||
|Ar ion beam | |||
|- | |- | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to 50nm* | |10Å to 50nm* | ||
|10Å to 600nm | |||
|10Å to 600nm | |10Å to 600nm | ||
|- | |- | ||
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! Deposition rate | ! Deposition rate | ||
|0.5 Å/s to 1 Å/s | |0.5 Å/s to 1 Å/s | ||
|about 1 Å/s | |||
|about 1 Å/s | |about 1 Å/s | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*Up to 4x6" wafers | *Up to 4x6" wafers | ||
*Up to 3x8" wafers (ask for holder) | *Up to 3x8" wafers (ask for holder) | ||
*small pieces | |||
| | |||
*Up to 1x4" wafers | |||
*Up to 1x6" wafer | |||
*small pieces | *small pieces | ||
| | | | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| Substrate gets hot during deposition | | Substrate gets hot during deposition | ||
(for a 60 nm film it rose above 123 C) | (for a 60 nm film it rose above 123 C) | ||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
|} | |} | ||
'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | '''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | ||