Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
No edit summary |
|||
Line 2: | Line 2: | ||
==Silicon nitride etch with | ==Silicon nitride etch - fast - with resist mask== | ||
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5"> | <gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5"> | ||
Revision as of 17:44, 20 December 2022
Feedback to this page: click here
Silicon nitride etch - fast - with resist mask
-
2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
-
30sec etch
-
30 sec etch - 1µm pitch
-
30 sec etch - 3µm pitch
-
30 sec etch - 3 µm pitch
Silicon nitride etch with the standard silicon oxide etch
-
Profile of lines with 1µm pitch
-
Profile of lines with 4µm pitch
-
Profile of 2µm line - zoom in on 4µm pitch