Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
No edit summary |
|||
| Line 11: | Line 11: | ||
==Compare the methodes== | ==Compare the methodes== | ||
{| border="1" cellspacing="0" cellpadding=" | {| border="1" cellspacing="0" cellpadding="4" align="center" | ||
! | ! | ||
! LPCVD | ! LPCVD | ||
! PECVD | ! PECVD | ||
! Sputter technic | |||
|- | |- | ||
| Stoichiometry | | Stoichiometry | ||
| Line 25: | Line 26: | ||
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | *Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | ||
Can be doped with boron, phosphorus or germanium | Can be doped with boron, phosphorus or germanium | ||
|? | |||
|- | |- | ||
|Film thickness | |Film thickness | ||
| Line 32: | Line 34: | ||
| | | | ||
*~40nm - 10µm | *~40nm - 10µm | ||
| | |||
|- | |- | ||
|Process Temperature | |Process Temperature | ||
| Line 38: | Line 41: | ||
| | | | ||
*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
| | |||
|- | |- | ||
|Step coverage | |Step coverage | ||
| Line 44: | Line 48: | ||
| | | | ||
*Less good | *Less good | ||
| | |||
|- | |- | ||
|Film quality | |Film quality | ||
| Line 52: | Line 57: | ||
*Less dense film | *Less dense film | ||
*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
| | |||
|- | |- | ||
|Process volume | |Process volume | ||
| Line 60: | Line 66: | ||
*1-3 4" wafers or 1 6" wafer or many smaller chips per run | *1-3 4" wafers or 1 6" wafer or many smaller chips per run | ||
*deposition on one side of the substrate | *deposition on one side of the substrate | ||
| | |||
|- | |- | ||
| Substrate material allowed | | Substrate material allowed | ||
| Line 71: | Line 78: | ||
*Quartz | *Quartz | ||
*Small amount of metal (in PECVD3) | *Small amount of metal (in PECVD3) | ||
| | |||
|- | |- | ||
|} | |} | ||