Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
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! Pre-clean | ! Pre-clean | ||
|Ar ion bombardment | |Ar ion bombardment | ||
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|RF Ar clean | |RF Ar clean | ||
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|10 Å to 1 µm * | |10 Å to 1 µm * | ||
|10 Å to 1 µm * | |10 Å to 1 µm * | ||
|10 Å to 5000 Å ** | |10 Å to 5000 Å ** | ||
|10 Å to 5000 Å ** | |10 Å to 5000 Å ** | ||
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|2-10 Å/s | |2-10 Å/s | ||
|10-15 Å/s | |10-15 Å/s | ||
|Depends on process parameters, about 1 Å/s | |Depends on process parameters, about 1 Å/s | ||
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | |Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
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*6x4" wafers or | *6x4" wafers or | ||
*6x6" wafers | *6x6" wafers | ||
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* Pieces or | * Pieces or | ||
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* Mylar | * Mylar | ||
* SU-8 | * SU-8 | ||
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* Almost any that do not outgas. | * Almost any that do not outgas. | ||
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*Almost any that do not outgas. Check the cross-contamination | *Almost any that do not outgas. Check the cross-contamination sheet in Labmanager. | ||
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Base materials:<br> | Base materials:<br> |
Revision as of 10:24, 21 September 2022
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Nickel deposition
Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | E-beam evaporation (Wordentec) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | Electroplating (Electroplating-Ni) | ||
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General description | E-beam deposition of Nickel | E-beam deposition of Nickel | Sputter deposition of Nickel | Sputter deposition of Nickel | Electroplating of Nickel | |
Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean | None | ||
Layer thickness | 10 Å to 1 µm * | 10 Å to 1 µm * | 10 Å to 5000 Å ** | 10 Å to 5000 Å ** | ~ 20 µm to ~ 1000 µm | |
Deposition rate | 2-10 Å/s | 10-15 Å/s | Depends on process parameters, about 1 Å/s | Depends on process parameters, at least ~ 4 Å/s, see conditions here | ~ 10-250 Å/s | |
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* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine
** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine
Quality control of e-beam evaporated Ni films
Quality control (QC) for Wordentec | ||||||||||||||||
Thickness is measured in 5 points with a stylus profiler. |
Quality control (QC) for the Temescal | ||||||||||||||||||
Thickness is measured in 5 points with a stylus profiler. |