Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
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| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| Thermal deposition of Ag | | Thermal deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
| Sputter deposition of Ag | | Sputter deposition of Ag | ||
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| Ar ion beam bombardment | | Ar ion beam bombardment | ||
| none | | none | ||
| none | | none | ||
| | | none | ||
| RF Ar clean | | RF Ar clean | ||
| RF Ar clean | | RF Ar clean | ||
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|10Å to 0.5µm ** | |10Å to 0.5µm ** | ||
|10Å to 0.5µm **(0.5µm not on all wafers) | |10Å to 0.5µm **(0.5µm not on all wafers) | ||
|10Å to about 3000Å | |10Å to about 3000Å | ||
|10Å to about 2000Å | |10Å to about 2000Å | ||
| Line 70: | Line 66: | ||
|1 to 10Å/s | |1 to 10Å/s | ||
|5Å/s | |5Å/s | ||
|1 to 10Å/s | |1 to 10Å/s | ||
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | |Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook). | ||
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*6x4" wafers or | *6x4" wafers or | ||
*24x2" wafers | *24x2" wafers | ||
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*6x6" wafers or | *6x6" wafers or | ||
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!Allowed materials | !Allowed materials | ||
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* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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* | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | *Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager. | ||
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| Pumpdown approx 15 min. | | Pumpdown approx 15 min. | ||
| Only very thin layers. Pumpdown approx 1 hour. | | Only very thin layers. Pumpdown approx 1 hour. | ||
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Revision as of 10:12, 21 September 2022
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Deposition of Silver
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Sputter deposition of Silver
Thermal deposition of Silver
Comparison of deposition equipment for silver
| E-beam evaporation (Temescal) | Thermal evaporation (Thermal Evaporator) | Thermal evaporation (Wordentec) | Sputter deposition (Wordentec) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|---|---|---|
| General description | E-beam deposition of Ag | Thermal deposition of Ag | Thermal deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag | Sputter deposition of Ag including pulsed DC and HiPIMS |
| Pre-clean | Ar ion beam bombardment | none | none | none | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 1µm* | 10Å to 0.5µm ** | 10Å to 0.5µm **(0.5µm not on all wafers) | 10Å to about 3000Å | 10Å to about 2000Å | 10Å to ? |
| Deposition rate | 1 to 10Å/s | 5Å/s | 1 to 10Å/s | Depending on process parameters (also written in the logbook). | Dependent on process parameters. | Dependent on process parameters. |
| Batch size |
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very bad uniformity above 4" wafers |
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| Allowed materials |
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| Comment | Pumpdown approx 20 min. Possible to tilt the wafer. | Pumpdown approx 15 min. | Only very thin layers. Pumpdown approx 1 hour. | Load and transfer approx. 12 minutes |
* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk
*** Please ask responsible staff for 8" wafer holder