Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2/Images of 1SIO2mbr with burned resist mask: Difference between revisions

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=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned </span> =
=<span style="color:#FF0000"> Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned </span> =
 
* <span style="color:#FF0000"> This information is save because it might be valuable as inspiration for other dry etch systems.
===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===
===Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material ===
''Berit Geilman Herstrøm (BGE) from Nanolab@DTU''
''Berit Geilman Herstrøm (BGE) from Nanolab@DTU''

Latest revision as of 13:07, 6 September 2022

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Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned

  • This information is save because it might be valuable as inspiration for other dry etch systems.

Etch of SiO2 using the recipe 1SIO2mbr with burned resist as masking material

Berit Geilman Herstrøm (BGE) from Nanolab@DTU

Process date: Before 2004
Recipe: 1sio2mbr
Process time: ? min
Mask: Burned resist
Structure size on mask: 3 µm
Etch rate ~120nm/min