Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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* 0.3 nm/min | * 0.3 nm/min | ||
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* 1.7 nm/min | * About 1.7 nm/min, depends on sputtering parameters | ||
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*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | *0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) |
Revision as of 12:51, 31 August 2022
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Deposition of aluminium oxide
Aluminium oxide (Alumina, Al2O3) can be deposited by use of ALD (atomic layer deposition) or by sputtering. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.
Comparison of the methods for deposition of Alumium Oxide
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | ALD Picosun 200 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on Al2O3 | |||
Substrate size |
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Allowed materials |
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