Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions
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* 0.5-2 nm/min | * 0.5-2 nm/min | ||
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* at least up to ~ | * at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]]) | ||
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Revision as of 12:25, 20 July 2022
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Deposition of ITO
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:
Comparison of the methods for deposition of ITO
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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