Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

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* 0.5-2 nm/min
* 0.5-2 nm/min
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* at least up to ~ 12 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]])
* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|see conditions]])
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Revision as of 12:25, 20 July 2022

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Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

Comparison of the methods for deposition of ITO

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1)
Generel description
  • RF sputtering of an ITO target - reactive sputtering possible
  • RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
  • Pulsed DC sputtering of an ITO target - reactive sputtering possible
Stoichiometry
  • Not known
  • In:Sn:O ~ 39:3:58 in the acceptance test. Can be tuned by altering deposition conditions.
Film Thickness
  • few nm - ~ 200 nm
  • few nm - ~ 1 μm
Deposition rate
  • 0.5-2 nm/min
Step coverage
  • unknown
  • unknown
Process Temperature
  • Up to 400 °C
  • Up to 600 °C
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
Allowed materials
  • almost any