Specific Process Knowledge/Thin film deposition/Deposition of Ruthenium

Deposition of Ru

Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment:

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)
General description	E-beam deposition of Ru (line-of-sight deposition)	Sputter deposition of Ru (not line-of-sight deposition)
Pre-clean	Ar ion bombardment	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to 1µm**
Deposition rate	0.5Å/s to 10Å/s	~1Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller pieces	smaller pieces Up to 1x6" wafers
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment	Please contact the thin film group before depositing Ru, even if Ru is in the machine. The current target material belongs to a specific customer.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)