Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

Revision as of 13:26, 3 October 2021

Feedback to this page: click here

Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	E-beam evaporation (Wordentec)	Sputter deposition (Lesker)
General description	E-beam deposition of Pt	E-beam deposition of Pt	Sputter deposition of Pt
Pre-clean	Ar ion source	none	RF Ar clean
Layer thickness	10Å - 600nm*	10Å - 600nm*	10Å - 600nm*
Deposition rate	0.5Å/s to 10Å/s	0.5Å/s to 10Å/s	? Å/s to ? Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller wafers and pieces	24x2" wafers or 6x4" wafers or 6x6" wafers	1x4" wafer or 1x6" wafer smaller pieces
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.

@@ Line 24: / Line 24: @@
 |Ar ion source
-|RF Ar clean
+|none
 |RF Ar clean
@@ Line 30: / Line 30: @@
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å - 1µm*
+|10Å - 600nm*
-|10Å to 5000Å*
+|10Å - 600nm*
-|10Å to 5000Å
+|10Å - 600nm*
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
 |0.5Å/s to 10Å/s
-|10Å/s to 15Å/s
+|0.5Å/s to 10Å/s
 |? Å/s to ? Å/s
 |-