Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE/Nitride_etch_with_DUV_mask click here]''' | ||
==Silicon nitride etch with STS recommended silicon nitride recipe== | ==Silicon nitride etch with STS recommended silicon nitride recipe== | ||
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in | <gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min 15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab " widths="300px" heights="250px" perrow="5"> | ||
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si | Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si |
Revision as of 15:01, 18 August 2021
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