Specific Process Knowledge/Etch/OES: Difference between revisions

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* Pegasus 1
* Pegasus 1
* Pegasus 4
* Pegasus 4
The section below describes the principle behind Optical Emission Spectroscopy (OES) in relation the End Point Detection (EPD) system.
The section below describes the principle behind the optical endpoint detection system.


== Optical Emission Spectroscopy ==
== Optical Emission Spectroscopy ==
As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> that is decomposed by the plasma into smaller and smaller molecules until the radical F<sup>*</sup> is formed.


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Revision as of 14:15, 26 November 2020

Optical endpoint detection on the dry etch tools at DTU Nanolab

Several dry etch tools at DTU Nanolab are equipped with an endpoint detection system. Out of those systems only one is not of the type optical endpoint detection. The instruments are:

  • ICP Metal Etch
  • III-V ICP
  • Pegasus 1
  • Pegasus 4

The section below describes the principle behind the optical endpoint detection system.

Optical Emission Spectroscopy

As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF6 that is decomposed by the plasma into smaller and smaller molecules until the radical F* is formed.

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Monitored species Wavelength (nm) Monitored species Wavelength (nm)
Al 308.2, 309.3, 396.1 In 325.6
AlCl 261.4 N 674.0
As 235.0 N2 315.9, 337.1
C2 516.5 NO 247.9, 288.5, 289.3, 303.5, 304.3, 319.8, 320.7, 337.7, 338.6
CF2 251.9 O 777.2, 844.7
Cl 741.4 OH 281.1, 306.4, 308.9
CN 289.8, 304.2, 387.0 S 469.5
CO 292.5, 302.8, 313.8, 325.3, 482.5, 483.5, 519.8 Si 288.2
F 703.7, 712.8 SiCl 287.1
Ga 417.2 SiF 440.1, 777.0
H 486.1, 656.5