LabAdviser/Technology Research/Smoothed advanced silicon NEMS devices: Difference between revisions

This project aims to facilitate a reliable creation of smooth and slender nanostructures to demonstrate the ability in some state-of-the-art and novel NEMS applications include 1) resonators and sensors for physical and bio-chemical sensing down to the molecular level both because of the much reduced mass, 2) nanowires for novel transistors and photovoltaics increasingly exploring quantum effects starting at the sub-50nm level, 3) nanostructures for photonics (around the wavelength of the guided photons) and next generation storage (10nm and below), 4) black silicon for high area catalyzed reaction chambers and photovoltaics, 5) through wafer vias for packaging applications, and 6) nano imprint lithography (NIL) masters. The approach is to first create nanoscale silicon patterns using the modern high density plasma tool (SPTS DRIE-Pegasus). This structure is then annealed in pure hydrogen at high temperature (1100^oC) and high vacuum (10E-6 mbar) using an annealling tool (Annealsys RTP-150-HV). The quantitative analysis on the sidewall roughness reduction will be measured using scanning electron microscopes (SEM) and atomic force microscope (AFM).