Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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== Deposition of Aluminium Nitride ==
== Deposition of Aluminium Nitride ==


AlN films can be deposited by using  the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]].
AlN films can be deposited by sputtering or by atomic layer deposition (ALD).


In the Lesker sputter system AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition .
In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.


==Comparison of the methods for deposition of Silicon Oxide==
==Comparison of the methods for deposition of AlN==


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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]
 
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride(PC3)]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
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*Reactive Sputtering ( 2" Al target)  
*Reactive Sputtering ( 2" Al target)  
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*Pulsed reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
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*Plasma Enhanced Atomic Layer Deposition
*Plasma Enhanced Atomic Layer Deposition
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!Stoichiometry
!Stoichiometry
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*Not tested
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*AlN
*AlN

Revision as of 21:17, 21 April 2020

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Deposition of Aluminium Nitride

AlN films can be deposited by sputtering or by atomic layer deposition (ALD).

In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.

Comparison of the methods for deposition of AlN

Sputter-System (Lesker) Sputter-System Metal-Nitride(PC3) ALD2
Generel description
  • Reactive Sputtering ( 2" Al target)
  • Pulsed reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
  • Plasma Enhanced Atomic Layer Deposition
Stoichiometry
  • AlN
Film Thickness
  • 0nm - 200nm
  • 0nm - 50nm
Deposition rate
  • Not tested
  • 0.0625 nm/cycle on a flat sample
  • 0.0558 nm/cycle on a high aspect ratio structures
Step coverage
  • Very good
  • Very good
Process Temperature
  • Up to 600oC
  • 350oC
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • Several small samples
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)

Further process information can be found here: