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Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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== Deposition of Aluminium Nitride ==
== Deposition of Aluminium Nitride ==


AlN films can be deposited by using  the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]].
AlN films can be deposited by sputtering or by atomic layer deposition (ALD).


In the Lesker sputter system AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition .
In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.


==Comparison of the methods for deposition of Silicon Oxide==
==Comparison of the methods for deposition of AlN==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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!
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]
 
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride(PC3)]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
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*Reactive Sputtering ( 2" Al target)  
*Reactive Sputtering ( 2" Al target)  
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*Pulsed reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
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*Plasma Enhanced Atomic Layer Deposition
*Plasma Enhanced Atomic Layer Deposition
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!Stoichiometry
!Stoichiometry
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*Not tested
*
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*
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*AlN
*AlN
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