Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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== Deposition of Aluminium Nitride == | == Deposition of Aluminium Nitride == | ||
AlN films can be deposited by | AlN films can be deposited by sputtering or by atomic layer deposition (ALD). | ||
In the | In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen. | ||
==Comparison of the methods for deposition of | ==Comparison of the methods for deposition of AlN== | ||
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]] | ||
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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ||
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*Reactive Sputtering ( 2" Al target) | *Reactive Sputtering ( 2" Al target) | ||
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*Pulsed reactive sputtering | |||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | |||
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*Plasma Enhanced Atomic Layer Deposition | *Plasma Enhanced Atomic Layer Deposition | ||
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!Stoichiometry | !Stoichiometry | ||
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*AlN | *AlN |
Revision as of 21:17, 21 April 2020
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Deposition of Aluminium Nitride
AlN films can be deposited by sputtering or by atomic layer deposition (ALD).
In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.
Comparison of the methods for deposition of AlN
Sputter-System (Lesker) | Sputter-System Metal-Nitride(PC3) | ALD2 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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Further process information can be found here:
- AlN deposition using ALD2
- For AlN deposition using the Lesker please contact the Thinfilm group.