Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]]) | |||
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]]) | ! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]]) | ||
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|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
|Sputter deposition of Nickel | |||
|Sputter deposition of Nickel | |Sputter deposition of Nickel | ||
|Electroplating of Nickel | |Electroplating of Nickel | ||
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|RF Ar clean | |RF Ar clean | ||
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|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
|None | |None | ||
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|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 2000 Å | |10Å to 2000 Å | ||
|10Å to | |10Å to 5000 Å | ||
|10Å to 5000 Å | |||
|~20 µm to ~1000 µm | |~20 µm to ~1000 µm | ||
|- | |- | ||
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|1 to 10Å/s | |1 to 10Å/s | ||
|Depends on process parameters. About 1 Å/s | |Depends on process parameters. About 1 Å/s | ||
|Depends on process parameters. | |||
|About 10 Å/s to 250 Å/s | |About 10 Å/s to 250 Å/s | ||
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* 1x4" wafer or | * 1x4" wafer or | ||
* 1x6" wafer | * 1x6" wafer | ||
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*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
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*1x2" wafer or | *1x2" wafer or | ||