Specific Process Knowledge/Characterization/XPS/NexsaOverview: Difference between revisions

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Title	Type	Author	WOS link	XPS	UPS	ISS	REELS	Raman	Additional options/hardware
Publication	'	'	'	Techniques applied	'	'	'	'	'	Sample types/Materials	Description of application/Abstract
Multitechnique Surface Characterization of Organic LED Material	Application note	P Mack		X	X		X			Organic LED's	Abstract
Advantages of coincident XPS-Raman in the analysis of mineral oxides species	Application note			X				X		TiO2, CaCO3
Spectroscopic analysis of solid oxide fuel cell material with XPS	Application note	P Mack		X
Rapid XPS image acquisition using SnapMap	Application note	R Simpson		X					SnapMap
Composition, coverage and band gap analysis of ALD-grown ultra thin films	Application note	P Mack		X		X	X		Band gap	Gate dielectrics, HfO2, SiO2
Confirming the layer structure of an organic FET device	Application note	P Mack		X					MAGCIS	Organic FET's,
Surface analysis of zeolites: An XPS, variable kinetic energy XPS, and low energy ion scattering study	Publication	SR Bare	link	X		X				Zeolites, Metal oxides	Abstract
Surface composition analysis by low-energy ion scattering	Publication, background	H H Brongersma	link			X					Abstract
Monitoring surface metal oxide catalytic active sites with Raman spectroscopy	Publication, review	I E Wachs	link					X		Metal oxides	Abstract
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing	Publication	W Cabrera	link	X		X			TEM	HfO2, InGaAs, ALD	Abstract
Low energy ion scattering (LEIS). A practical introduction to its theory, instrumentation, and applications	Publication, review	C V Cushman	link			X					Abstract
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability	Publication	S McDonnell	link	X		X			AFM, ALD	HfO2, MoS2	Abstract
Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS	Publication	S Prusa	link			X				graphene	Abstract
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials	Publication	H C Shin	[1]	X			X		Valence band	HfZrO4,	Abstract
Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions	Publication	R Steinberger	link	X		X			AES, ARXPS, sputter profiles	Abstract
Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders	Publication	E Symianakis		X		X			XRD	Catalysts, LaMnO3	Abstract
The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy	Publication	M Wiesing	link	X	X	X			Ar sputtering	TiAlN	Abstract
Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy	Publication	L S Liao	link	X	X					Polymer	Abstract
Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS	Publication	Y R Denny	link	X			X				Abstract

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 | Surface composition analysis by low-energy ion scattering||Publication, background||H H Brongersma||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000245323100001&cacheurlFromRightClick=no link]||||||X||||||||||<span title="Low-energy ion scattering (LEIS) is an analytical tool that provides information on the atomic composition of the outer surface, when noble gas ions are used as projectiles. In fact, quantitative composition analysis is currently done on a huge variety of materials, including catalysts and organic materials. The information on the surface composition is contained in the signal of backscattered ions (typically 1–3 keV He+, Ne+). In order to translate the LEIS signal to an elemental surface concentration all factors determining the LEIS signal must be known. These are in particular the scattering cross section and the ion fraction of the backscattered particles. The scattering cross section, which is due to the screened electrostatic potential between target atom and projectile, is well-known for the prevailing conditions of LEIS. It is an intriguing fact that, despite the large quantity of successful applications, the charge exchange processes in LEIS are not yet fully understood. It is e.g. not known why in LEIS for a given atomic species on the surface the signal usually does not depend on which other species are present (absence of matrix effects). Significant progress has recently been made in the understanding of the underlying charge exchange processes. Therefore, the aim of this review is twofold: on the one hand, to summarize the present understanding of the factors that determine the ion fraction of the scattered projectiles in LEIS, i.e. charge exchange processes. On the other hand, to summarize how quantitative surface composition analysis can be accomplished. In addition, we critically review publications that deal with surface composition analysis by LEIS, and analyze in which cases and by what means this was achieved and where and why it was successful or failed. After reading this review the reader will be able to deal with the pitfalls encountered in LEIS and to choose preferred experimental conditions for quantitative surface composition analysis.">Abstract</span>
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-| Monitoring surface metal oxide catalytic active sites with Raman spectroscopy||Publication, review||I E Wachs||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000284267000027 link]||||||||||X||||Metal oxides||<span title="The molecular aspect of the Raman vibrational selection rules allows for the molecular structural and reactivity determinations of metal oxide catalytic active sites in all types of oxide catalyst systems (supported metal oxides, zeolites, layered hydroxides, polyoxometalates (POMs), bulk pure metal oxides, bulk mixed oxides and mixed oxide solid solutions). The molecular structural and reactivity determinations of metal oxide catalytic active sites are greatly facilitated by the use of isotopically labeled molecules. The ability of Raman spectroscopy to (1) operate in all phases (liquid, solid, gas and their mixtures), (2) operate over a very wide temperature (273 degC to >1000 degC) and pressure (UHV to c100 atm) range, and (3) provide molecular level information about metal oxides makes Raman spectroscopy the most informative characterization technique for understanding the molecular structure and surface chemistry of the catalytic active sites present in metal oxide heterogeneous catalysts. The recent use of hyphenated Raman spectroscopy instrumentation (e.g., Raman–IR, Raman–UV-vis, Raman–EPR) and the operando Raman spectroscopy methodology (e.g., Raman–MS and Raman–GC) is allowing for the establishment of direct structure–activity/selectivity relationships that will have a significant impact on catalysis science in this decade. Consequently, this critical review will show the growth in the use of Raman spectroscopy in heterogeneous catalysis research, for metal oxides as well as metals, is poised to continue to exponentially grow in the coming years."> Abstract</span>
+| Monitoring surface metal oxide catalytic active sites with Raman spectroscopy||Publication, review||I E Wachs||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000284267000027 link]||||||||||X||||Metal oxides||<span title="The molecular aspect of the Raman vibrational selection rules allows for the molecular structural and reactivity determinations of metal oxide catalytic active sites in all types of oxide catalyst systems (supported metal oxides, zeolites, layered hydroxides, polyoxometalates (POMs), bulk pure metal oxides, bulk mixed oxides and mixed oxide solid solutions). The molecular structural and reactivity determinations of metal oxide catalytic active sites are greatly facilitated by the use of isotopically labeled molecules. The ability of Raman spectroscopy to (1) operate in all phases (liquid, solid, gas and their mixtures), (2) operate over a very wide temperature (273 degC to 1000 degC) and pressure (UHV to c100 atm) range, and (3) provide molecular level information about metal oxides makes Raman spectroscopy the most informative characterization technique for understanding the molecular structure and surface chemistry of the catalytic active sites present in metal oxide heterogeneous catalysts. The recent use of hyphenated Raman spectroscopy instrumentation (e.g., Raman–IR, Raman–UV-vis, Raman–EPR) and the operando Raman spectroscopy methodology (e.g., Raman–MS and Raman–GC) is allowing for the establishment of direct structure–activity/selectivity relationships that will have a significant impact on catalysis science in this decade. Consequently, this critical review will show the growth in the use of Raman spectroscopy in heterogeneous catalysis research, for metal oxides as well as metals, is poised to continue to exponentially grow in the coming years."> Abstract</span>
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 | Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing||Publication||W Cabrera||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000329838800016 link]||X||||X||||||TEM||HfO2, InGaAs, ALD||<span title="Diffusion of indium through HfO2 after post deposition annealing in N2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 degree C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance."> Abstract</span>